Electronics and Communication Engineering - Electronic Devices and Circuits

36. 

If 100 V is the peak voltage across the secondary of the transformer in a half-wave rectifier (without any filter circuit), then the maximum voltage on the reverse-biased diode is

A. 200 V
B. 141.4 V
C. 100 V
D. 86 V

Answer: Option B

Explanation:

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37. 

The O/P Power of a power amplifier is several times its input power. It is possible because

A. power amplifier introduces a -ve resistance
B. there is +ve feed back in the circuit
C. step up transformer is use in the circuit
D. power amplifier converts a part of I/P d.c. power into a.c. power

Answer: Option D

Explanation:

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38. 

In p type semiconductor holes are majority carriers.

A. True
B. False

Answer: Option A

Explanation:

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39. 

Due to the formation of Schottky defects the density of the crystal

A. increases slightly
B. increases appreciably
C. decreases slightly
D. decreases appreciably

Answer: Option C

Explanation:

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40. 

The band gap of silicon at 300K is

A. 1.36 eV
B. 1.10 eV
C. 0.80 eV
D. 0.67 eV

Answer: Option B

Explanation:

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