Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
16.
Consider the following statement S1 and S2.
S1: The β of a bipolar transistor reduces if the base width is increased.
S2: the β of a bipolar transistor increases if the doping concentration in the base is increased.
Which one of the following is correct?
S1: The β of a bipolar transistor reduces if the base width is increased.
S2: the β of a bipolar transistor increases if the doping concentration in the base is increased.
Which one of the following is correct?
17.
Assertion (A): A BJT can be used as a switch.
Reason (R): In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.
18.
The concentration of minority carriers in an extrinsic semiconductor under equilibrium is
19.
The mean life time of the minority carriers is in the range of a few
20.
Choose the correct match for input resistance of various amplifier configurations shown below configuration.
| CB : Common Base | LO : Low |
| CC : Common Collector | MO : moderate |
| CE : Common Emitter | HI: High |
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