Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
41.
Consider the following statements about conditions that make a metal semiconductor contact rectifying
- N type semiconductor with work function φs more than work function φM of metal
- N type semiconductor with work function φs less than work function φM of metal
- P type semiconductor with work function φs more than work function φM of metal
- P type semiconductor with work function φs less than work function φM of metal.
42.
Silicon diodes have __________ reverse resistance than germanium diodes.
43.
The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on
44.
When reverse bias is applied to a junction diode
45.
Which of the following statements regarding two transistor model of p-n-n-p device is correct?
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