Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
31.
The forbidden band in semiconductors is of the order of
32.
For an P-N-P transistor in normal operation its junction are biased as
33.
A FET is to be operated as voltage variable resistor. For this drain to source voltage VDS should be,
34.
Assertion (A): FET has characteristics very similar to that of pentode.
Reason (R): Both FET and pentode are voltage controlled devices.
35.
The current gain of a bipolar transistor drops at high frequencies because of
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