Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
26.
The primary reason for the widespread use of Si in semiconductor device technology is
27.
If the conductivity of pure germanium is 1.54 siemens/metre, its resistivity in ohm-metre will be nearly
28.
Reluctivity is analogous to
29.
The v-i characteristics of a diode may be linear or non linear.
30.
If a coil has diameter 'd' number of turns 'N' and form factor F then the inductance of the coil is proportional to
N2dF
Nd2F
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