Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
16.
Which of the following is the ferric electric material?
17.
The amount of time between the creation and disappearance of a hole in an intrinsic semiconductor material is called
18.
In photo electric emission, the threshold frequency f0, work function Uw, and Planck's constant h are related as
f0 = (Uw)(h)2
h = (Uw)(f0)
19.
In which n type device does p substrate extend upto silicon dioxide layer?
20.
In a N-type semi-conductor, the concentration of minority carriers is mainly depends on
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers