Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
36.
In a p-n-p transistor the main current carriers and the mechanism of flow respectively are
37.
The 6 V zener diode shown in figure has zero zener resistance and a knee current of 5 mA. The minimum value of R, so that the voltage across it does not fall below 6 V is
38.
Secondary emission occurs in
39.
In common base connection, the output characteristics of a bipolar junction transistor is drawn between
40.
In fabricating silicon BJT in ICs by the epitaxial process, the number of diffusions used is usually
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