Electronics and Communication Engineering - Electronic Devices and Circuits

26. 

In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is

A. P+ -doped
B. n+ -doped
C. used to reduce the parasitic capacitance
D. located in the emitter region

Answer: Option C

Explanation:

No answer description available for this question. Let us discuss.

27. 

Which quantity controls the effectiveness of LED in emitting light?

A. Applied voltage
B. Current
C. Extent of doping
D. Temperature

Answer: Option D

Explanation:

No answer description available for this question. Let us discuss.

28. 

The current gain of a BJT is

A. gm r0
B. gm/r0
C. gm rp
D. gm/rp

Answer: Option C

Explanation:

No answer description available for this question. Let us discuss.

29. 

Ferromagnetic materials exhibit

A. a linear B-H behaviour
B. a non-linear B-H behaviour
C. an exponential B-H behaviour
D. none of the above

Answer: Option B

Explanation:

No answer description available for this question. Let us discuss.

30. 

The saturation current in a semi-conductor diode

A. depends on forward voltage
B. depends on reverse voltage
C. is due to thermally generated minority carriers
D. none of the above

Answer: Option C

Explanation:

No answer description available for this question. Let us discuss.