Electronics and Communication Engineering - Exam Questions Papers
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41.
For a message signal m(t) = cos (2pfmt) and the carrier frequency fc, which of the following represents a single side band (SSB) signal?
42.
In the circuit shown below, the op-amp is ideal, the transistor has VBE = 0.6 V and β = 150. Decide whether the feedback in the circuit is positive or negative and determine the voltage V at the output of the op-amp


43.
Which of the following addressing modes is used in the instruction PUSH B?
44.
Consider a silicon p-n junction at room temperature having the following parameters:
Doping on the n-side = 1 x 1017 cm-3
Depletion width on the n-side = 0.1 μm
Depletion width on the p-side = 1.0 μm
Intrinsic carrier concentration = 1.4 x 1014F. cm-1.
Thermal voltage = 26mV
Permittivity of free space = 8.85 x 10-14F. cm-1.
Dielectric constant of silicon = 12. The peak electric field in the device is
Doping on the n-side = 1 x 1017 cm-3
Depletion width on the n-side = 0.1 μm
Depletion width on the p-side = 1.0 μm
Intrinsic carrier concentration = 1.4 x 1014F. cm-1.
Thermal voltage = 26mV
Permittivity of free space = 8.85 x 10-14F. cm-1.
Dielectric constant of silicon = 12. The peak electric field in the device is
45.
A single turn loop is situated in air, with a uniform magnetic field normal to its plane. The area of the loop is 5 m2 and the rate of change of flux density is 2 Wb/m2/s. What is the emf appearing at the terminals of the loop?
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