Electronics and Communication Engineering - Exam Questions Papers - Discussion

44. 

Consider a silicon p-n junction at room temperature having the following parameters:
Doping on the n-side = 1 x 1017 cm-3
Depletion width on the n-side = 0.1 μm
Depletion width on the p-side = 1.0 μm
Intrinsic carrier concentration = 1.4 x 1014F. cm-1.
Thermal voltage = 26mV
Permittivity of free space = 8.85 x 10-14F. cm-1.
Dielectric constant of silicon = 12. The peak electric field in the device is

[A]. 0.15 MV.com-1, directed from p-region to n-region
[B]. 0.15 MV.com-1, directed from n-region to p-region
[C]. 1.80 MV.com-1, directed from p-region to n-region
[D]. 1.80 MV.com-1, directed from n-region to p-region

Answer: Option B

Explanation:

No answer description available for this question.

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