Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 6 (Q.No. 26)

Electronic Devices and Circuits

26.

In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is

P⁺ -doped

n⁺ -doped

used to reduce the parasitic capacitance

located in the emitter region

Answer: Option

Explanation:

No answer description is available. Let's discuss.

Discussion:

4 comments Page 1 of 1.

Chandra said: 5 years ago

Which is the correct answer B or C?

Himani said: 4 years ago

B is the right answer.

Saiteja said: 7 years ago

Answer is option B.

Freed said: 6 years ago

How? Explain.

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