Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 6 (Q.No. 26)
26.
In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is
P+ -doped
n+ -doped
used to reduce the parasitic capacitance
located in the emitter region
Answer: Option
Explanation:
No answer description is available. Let's discuss.
Discussion:
4 comments Page 1 of 1.

Saiteja said:   6 years ago
Answer is option B.

Freed said:   6 years ago
How? Explain.

Chandra said:   5 years ago
Which is the correct answer B or C?

Himani said:   3 years ago
B is the right answer.

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