Electronics and Communication Engineering - Digital Electronics
Exercise : Digital Electronics - Section 15
- Digital Electronics - Section 13
- Digital Electronics - Section 24
- Digital Electronics - Section 23
- Digital Electronics - Section 22
- Digital Electronics - Section 21
- Digital Electronics - Section 20
- Digital Electronics - Section 19
- Digital Electronics - Section 18
- Digital Electronics - Section 17
- Digital Electronics - Section 16
- Digital Electronics - Section 15
- Digital Electronics - Section 14
- Digital Electronics - Section 1
- Digital Electronics - Section 12
- Digital Electronics - Section 11
- Digital Electronics - Section 10
- Digital Electronics - Section 9
- Digital Electronics - Section 8
- Digital Electronics - Section 7
- Digital Electronics - Section 6
- Digital Electronics - Section 5
- Digital Electronics - Section 4
- Digital Electronics - Section 3
- Digital Electronics - Section 2
6.
A 1 ms pulse can be converted into a 10 ms pulse by using which one of the following
7.
In the DRAM cell in the figure is the Vt of the NMOSFET is 1 V. For the following three combinations of WL and BL voltages.


8.
Assertion (A): The carry look ahead adder is very fast
Reason (R): The carry look ahead adder generates the carry and sum digits directly.
9.
The factors which govern fan out of CMOS gates are
10.
Which of the following subtraction operations do not result in F16?
- (BA)16 - (AB)16
- (BC)16 - (CB)16
- (CB)16 - (BC)16
- (CB)16 - (BC)16
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers