Electronics and Communication Engineering - Exam Questions Papers
Exercise : Exam Questions Papers - Exam Paper 17
- Exam Questions Papers - Exam Paper 12
- Exam Questions Papers - Exam Paper 22
- Exam Questions Papers - Exam Paper 21
- Exam Questions Papers - Exam Paper 20
- Exam Questions Papers - Exam Paper 19
- Exam Questions Papers - Exam Paper 18
- Exam Questions Papers - Exam Paper 17
- Exam Questions Papers - Exam Paper 16
- Exam Questions Papers - Exam Paper 15
- Exam Questions Papers - Exam Paper 14
- Exam Questions Papers - Exam Paper 13
- Exam Questions Papers - Exam Paper 1
- Exam Questions Papers - Exam Paper 11
- Exam Questions Papers - Exam Paper 10
- Exam Questions Papers - Exam Paper 9
- Exam Questions Papers - Exam Paper 8
- Exam Questions Papers - Exam Paper 7
- Exam Questions Papers - Exam Paper 6
- Exam Questions Papers - Exam Paper 5
- Exam Questions Papers - Exam Paper 4
- Exam Questions Papers - Exam Paper 3
- Exam Questions Papers - Exam Paper 2
11.
For the BJT shown in figure, β = 50, the value of VCE is:


12.
An average response rectifier type electronic voltameter has a d.c. voltage of 10 V applied to it. What is the meter reading?
13.
Consider the common emitter amplifier shown below with the following circuit parameters: β = 100, gm = 0.3861 A/V, r0 = ∞ rp = 259 Ω, Rs = 1 kΩ, RB = 93 kΩ, RC = 250 Ω, RL = 1 kW, C1 = ∞ and C2 = 4.7mF.

The lower cut-off frequency due to C2 is

The lower cut-off frequency due to C2 is
14.
Number of fundamental cut-sets of any graph will be
15.
Consider a silicon p-n junction at room temperature having the following parameters:
Doping on the n-side = 1 x 1017 cm-3
Depletion width on the n-side = 0.1 μm
Depletion width on the p-side = 1.0 μm
Intrinsic carrier concentration = 1.4 x 1014F. cm-1.
Thermal voltage = 26mV
Permittivity of free space = 8.85 x 10-14F. cm-1.
Dielectric constant of silicon = 12. A built in potential of the junction.
Doping on the n-side = 1 x 1017 cm-3
Depletion width on the n-side = 0.1 μm
Depletion width on the p-side = 1.0 μm
Intrinsic carrier concentration = 1.4 x 1014F. cm-1.
Thermal voltage = 26mV
Permittivity of free space = 8.85 x 10-14F. cm-1.
Dielectric constant of silicon = 12. A built in potential of the junction.
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers