Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 4 (Q.No. 9)
9.
In a P type silicon sample, the hole concentration is 2.25 x 1015 / cm3. If the intrinsic carrier concentration is 1.5 x 1010/ cm3 the electron concentration is
Answer: Option
Explanation:
Electron concentration 
.
Discussion:
2 comments Page 1 of 1.
Panda said:
7 years ago
Explain the solution.
Nic said:
7 years ago
Law of mass action.
Ni^2(intrinsic)=NP.
Ni^2(intrinsic)=NP.
Post your comments here:
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers