Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 3 (Q.No. 49)
49.
The threshold voltage of a MOSFET can be lowered by
  1. using thin gate oxide
  2. reducing the substrate concentration
  3. increasing the substrate concentration.
Of the above statement
3 alone is correct
1 and 2 are correct
1 and 3 are correct
2 alone is correct
Answer: Option
Explanation:

Increasing the substrate concentration lowers threshold voltage. Gate oxide layer has no effect an threshold voltage.

Discussion:
5 comments Page 1 of 1.

Raju said:   1 decade ago
Gate oxide layer has no effect an threshold voltage.

Raju said:   1 decade ago
Answer should be [A] 3 alone is correct.

Because Gate oxide layer has no effect an threshold voltage.

Prabhat said:   7 years ago
The Correct option should be B.

Sabaj said:   7 years ago
Answer should be B.

Lets take example of n channel mosfet. The substrate will be p substrate. If we increase the conc hole will be increased. But to decrease threshold voltage we need more free electron in p substrate so that applying +ve voltage at gate quickly n channel formed.

ADC said:   3 years ago
Option C is correct but expiation is wrong.

i.e. Gate oxide layer has no effect on the threshold voltage. Reducing the thickness increases the capacitive action which causes more accumulation of charge.

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