Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 5 (Q.No. 18)
18.
In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that
Discussion:
13 comments Page 2 of 2.
Gaurab.bc said:
6 years ago
Less doping on B but size is too small than C so concentration is high.
JRAJ said:
3 years ago
Yes, agree E>C>B is the correct answer.
Mukesh said:
2 years ago
The correct form is E>C>B.
(1)
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