Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 5 (Q.No. 18)
18.
In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that
Discussion:
13 comments Page 1 of 2.
Gaurab.bc said:
6 years ago
Less doping on B but size is too small than C so concentration is high.
Sandy said:
9 years ago
I'm also agree with you @Mukund.
The answer should be E>C>B.
The answer should be E>C>B.
Mukund said:
9 years ago
I think the answer should be E > C > B.
JRAJ said:
3 years ago
Yes, agree E>C>B is the correct answer.
Bangla Dadu said:
8 years ago
E>C>B is the correct answer.
Amit said:
8 years ago
E>C>B is the correct form.
Siddeshwar kote said:
6 years ago
E>C>B is the correct form.
Mukesh said:
2 years ago
The correct form is E>C>B.
(1)
TUP-Taguig said:
8 years ago
Yes, it should be E>C>B!
Prince Joy said:
7 years ago
Yes, it should be E>C>B.
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