Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 1 (Q.No. 6)
6.
In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region to p-region. Then
Answer: Option
Explanation:
Emitter is p-type in p-n-p transistor.
Therefore holes are majority carriers.
Discussion:
9 comments Page 1 of 1.
K.pavani reddy said:
1 decade ago
Can you briefly explain the above criteria?
Sudha said:
1 decade ago
p-n-p transistor was holes are majority charger carrier so holes are larger amount was transfer the base to emitter.
Abc said:
1 decade ago
Emitter is heavily doped and base is lightly doped so current due to the injection of holes from p(emitter) to n(base) will be more than that due to the injection of electrons from n(base) to p(emitter) region.
Pragathi said:
9 years ago
Could anyone explain it briefly?
Pradeep said:
8 years ago
As holes injected in p current increases but at n as electrons injected current will be small because at n compensation of electrons takes place with holes. So ipE great than iEn.
K v satyanarayana said:
8 years ago
P N P :means; + - +, hole electron hole, emitter base collector, in this case emitter act as a hole ,that means holes are majority carriers.
(2)
Shania said:
8 years ago
Thank you @Satyanarayana.
Sireesha said:
7 years ago
The emitter is heavily doped region, the base is lightly doped region and collector is moderately doped region. In p-n-p transistor, the emitter has majority charge carriers of holes. Always current flows from emitter to base. Due Majority charge carriers of holes in emitter are injected from emitter to base. So Iep>> Ien.
(3)
NALLENDRAN said:
6 years ago
Pnp is holes majority.
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