Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 3 (Q.No. 37)
37.
In an n type semiconductor the fermi level is 0.35 eV below the conduction band, the concentration of donor atoms is increased to three times. The new position of Fermi level will be
Answer: Option
Explanation:
Therefore, conductivity increases.
Discussion:
4 comments Page 1 of 1.
Kshama said:
9 years ago
As the doping increase, fermilevel moves away from the centre of energy gap. So answer should be c.
Amod kumar jha said:
8 years ago
The Answer should be C not B.
Because as doping increases conductivity increases, as a result Fermi level will move away from intrinsic Fermi level (centre of energy gap) and it goes aven inside the conduction band.
Because as doping increases conductivity increases, as a result Fermi level will move away from intrinsic Fermi level (centre of energy gap) and it goes aven inside the conduction band.
Sachin kumar singh said:
7 years ago
Option C is correct.
Akash Deep Chauhan said:
3 years ago
How can option C is correct?
Fermi level can not go above the conduction band in any case. In case of SC, it will remain between CB and VB. If it will go inside CB then it will become metal.
Fermi level can not go above the conduction band in any case. In case of SC, it will remain between CB and VB. If it will go inside CB then it will become metal.
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