Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 4 (Q.No. 6)
6.
A Si sample is doped with a fixed number of group N impurities. The electron density n is measured from 4 K to 1200 k for the sample. Which one of the following is correct?
Discussion:
1 comments Page 1 of 1.
Mohammad yousuf said:
9 years ago
The doping concentration is directly proportional to T^3/2 and also to the e^1/t.
Post your comments here:
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers