Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 14 (Q.No. 19)
19.
Thermal runaway is not possible in FET, because as the temperature of FET increases.
the mobility decreases
the transconductance increases
impedance of the source
power dissipation in the chip
Answer: Option
Explanation:
No answer description is available. Let's discuss.
Discussion:
6 comments Page 1 of 1.

Madan said:   10 years ago
The mobility decreases.

Gp23 said:   9 years ago
Yes, you are correct @Madan. Mobility decreases.

Sateesh saliganti said:   9 years ago
What about option B?

Kamlesh said:   8 years ago
I think the answer A.

Saurabh kumar said:   5 years ago
I think option A is right.

Abhi said:   3 years ago
Thermal run away not possible in FET because Temperature increase mobility decreases.

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