Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 2 (Q.No. 33)
33.
The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 1016/m3. If after doping, the number of majority carriers is 5 x 1020/m3. The minority carrier density is
Answer: Option
Explanation:
Discussion:
2 comments Page 1 of 1.
Miti michael said:
5 years ago
Thanks for the given explanation.
Bala said:
5 years ago
It is according to mass action law.
(1)
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