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Electronics - Field Effect Transistors (FET) - Discussion

Discussion Forum : Field Effect Transistors (FET) - General Questions (Q.No. 9)
Field Effect Transistors (FET)
9.
IDSS can be defined as:
the minimum possible drain current
the maximum possible current with VGS held at –4 V
the maximum possible current with VGS held at 0 V
the maximum drain current with the source shorted
Answer: Option
Explanation:
No answer description is available. Let's discuss.
Discussion:
7 comments Page 1 of 1.
Asmi said:   4 years ago
Is the maximum current flows through a FET transistor, which is when the gate voltage, VG, supplied to the FET is 0v? Please anyone explain me clearly.
Niket said:   1 decade ago
Id = Idss (1-(Vgs/Vp))2.

If Vgs = 0 then Id = Idss.
Maru said:   1 decade ago
IDSS (referred to as the drain current for zero bias) is the maximum current that flows through a FET transistor, which is when the gate voltage, VG, supplied to the FET is 0V.
Shiva angirekula said:   1 decade ago
When we plot drain characteristics of fet i.e btween Vds and Id when Vgs = 0v we get max value of Id at a point of voltage called pinch off voltage.
Anu said:   1 decade ago
Id = Idss(1-Vgs/Vp)2.

when Vgs = 0, Id = Idss :) :).
Saad sarwar cheema said:   1 decade ago
As with the decrease in the value of the Vgs the gate to channel junction become reversed biased which resist the flow of current.
Sasi said:   1 decade ago
with the decrease of Vgs,Id decreaseses.it is max. At 0 Vgs which is Idss
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