Electronics - Field Effect Transistors (FET)

Exercise :: Field Effect Transistors (FET) - General Questions

6. 

When testing an n-channel D-MOSFET, resistance G to D = , resistance G to S = , resistance D to SS = and 500 , depending on the polarity of the ohmmeter, and resistance D to S = 500 . What is wrong?

A. short D to S
B. open G to D
C. open D to SS
D. nothing

Answer: Option D

Explanation:

No answer description available for this question. Let us discuss.

7. 

In the constant-current region, how will the IDS change in an n-channel JFET?

A. As VGS decreases ID decreases.
B. As VGS increases ID increases.
C. As VGS decreases ID remains constant.
D. As VGS increases ID remains constant.

Answer: Option A

Explanation:

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8. 

A MOSFET has how many terminals?

A. 2 or 3
B. 3
C. 4
D. 3 or 4

Answer: Option D

Explanation:

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9. 

IDSS can be defined as:

A. the minimum possible drain current
B. the maximum possible current with VGS held at –4 V
C. the maximum possible current with VGS held at 0 V
D. the maximum drain current with the source shorted

Answer: Option C

Explanation:

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10. 

What is the input impedance of a common-gate configured JFET?

A. very low
B. low
C. high
D. very high

Answer: Option A

Explanation:

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