Electronics - Field Effect Transistors (FET) - Discussion

9. 

IDSS can be defined as:

[A]. the minimum possible drain current
[B]. the maximum possible current with VGS held at –4 V
[C]. the maximum possible current with VGS held at 0 V
[D]. the maximum drain current with the source shorted

Answer: Option C

Explanation:

No answer description available for this question.

Sasi said: (Nov 1, 2010)  
with the decrease of Vgs,Id decreaseses.it is max. At 0 Vgs which is Idss

Saad Sarwar Cheema said: (Apr 24, 2012)  
As with the decrease in the value of the Vgs the gate to channel junction become reversed biased which resist the flow of current.

Anu said: (Mar 14, 2013)  
Id = Idss(1-Vgs/Vp)2.

when Vgs = 0, Id = Idss :) :).

Shiva Angirekula said: (Nov 20, 2013)  
When we plot drain characteristics of fet i.e btween Vds and Id when Vgs = 0v we get max value of Id at a point of voltage called pinch off voltage.

Maru said: (Jun 22, 2014)  
IDSS (referred to as the drain current for zero bias) is the maximum current that flows through a FET transistor, which is when the gate voltage, VG, supplied to the FET is 0V.

Niket said: (Jul 10, 2014)  
Id = Idss (1-(Vgs/Vp))2.

If Vgs = 0 then Id = Idss.

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