# Electronics - Field Effect Transistors (FET) - Discussion

### Discussion :: Field Effect Transistors (FET) - General Questions (Q.No.9)

9.

IDSS can be defined as:

 [A]. the minimum possible drain current [B]. the maximum possible current with VGS held at –4 V [C]. the maximum possible current with VGS held at 0 V [D]. the maximum drain current with the source shorted

Explanation:

No answer description available for this question.

 Sasi said: (Nov 1, 2010) with the decrease of Vgs,Id decreaseses.it is max. At 0 Vgs which is Idss

 Saad Sarwar Cheema said: (Apr 24, 2012) As with the decrease in the value of the Vgs the gate to channel junction become reversed biased which resist the flow of current.

 Anu said: (Mar 14, 2013) Id = Idss(1-Vgs/Vp)2. when Vgs = 0, Id = Idss :) :).

 Shiva Angirekula said: (Nov 20, 2013) When we plot drain characteristics of fet i.e btween Vds and Id when Vgs = 0v we get max value of Id at a point of voltage called pinch off voltage.

 Maru said: (Jun 22, 2014) IDSS (referred to as the drain current for zero bias) is the maximum current that flows through a FET transistor, which is when the gate voltage, VG, supplied to the FET is 0V.

 Niket said: (Jul 10, 2014) Id = Idss (1-(Vgs/Vp))2. If Vgs = 0 then Id = Idss.