Electronics and Communication Engineering - Matching Questions
Exercise : Matching Questions - Section 4
- Matching Questions - Section 1
- Matching Questions - Section 2
- Matching Questions - Section 3
- Matching Questions - Section 4
41.
Match the following:
| List I (Diode circuit) | List II (Name of the circuit) | ||
|---|---|---|---|
| A. | ![]() | 1. | Positive limiter |
| B. | ![]() | 2. | Positive clamper |
| C. | ![]() | 3. | Negative clamper |
42.
Match the following:
| List I | List II | ||
|---|---|---|---|
| A. | T (Reflection coefficient) = 0 | 1. | (ZL - Zo)/(ZL + Zo) |
| B. | T = - 1 | 2. | ZL = Zo |
| C. | T = + 1 | 3. | ZL = 0 |
| D. | - 1 < T < + 1 | 4. | ZL = ∞ |
43.
Match the following:
| List I (Memories) | List II (Characteristic) | ||
|---|---|---|---|
| A. | Static PLA | 1. | erasable, programmable |
| B. | CCD | 2. | ultra high speed |
| C. | ECL | 3. | stores large volume of data |
| D. | GAL | 4. | Does not need refreshing |
| 5. | Non-volatile |
44.
Match the following:
| List I | List II | ||
|---|---|---|---|
| A. | Copper | 1. | produces discrete energy level just above valence band |
| B. | Rubber | 2. | produces discrete energy level just below conduction band |
| C. | Antimony | 3. | large forbidden gap |
| D. | Boron | 4. | valence and conduction bands overlap |
45.
Match the following:
| List I (Diode Rectifier) | List II (Efficiency is Rf/RL = 0.25) | ||
|---|---|---|---|
| A. | Half wave | 1. | 0.54 |
| B. | Bridge Rectifier | 2. | 0.65 |
| C. | Full wave using tapped centre transformer | 3. | 0.325 |
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