Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 5 (Q.No. 32)
32.
Epitaxial growth is used in ICs
because it produces low parasitic capacitance
because it yields back to back isolating pn Junction
to grow single crystal n doped silicon on a single crystal P-type substrate
to grow Selectivity single crystal P doped silicon of one resistivity on a P type substrate of a different resistivity
Answer: Option
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