Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 8 (Q.No. 15)
15.
Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode?
  1. It has low saturation current.
  2. It has high value of cut in voltage.
  3. It can withstand large reverse voltage.
  4. When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions.
Select the answer using the given below
1 and 2
1, 2, 3, 4
2, 3, 4
1, 3
Answer: Option
Explanation:
No answer description is available. Let's discuss.
Discussion:
3 comments Page 1 of 1.

Sandy said:   8 years ago
Answer is 1, 3, 4 because under an ideal condition the cut in v/g should be 0 so no required of the large cut in v/g.

Chris said:   6 years ago
Cut in voltage should be 0, ideally.

Saurabh kumar said:   5 years ago
In the given point all point is indicated ideal diode expect point2.

An ideal diode cut-in voltage is about 0.

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