Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 1 (Q.No. 48)
48.
The power dissipation in a transistor is the product of
Answer: Option
Explanation:
Maximum power dissipation occurs at collector junction.
Discussion:
2 comments Page 1 of 1.
Keerthi said:
6 years ago
Can anyone explain the answer?
Tarif Hazari said:
2 weeks ago
P = Vce * Ic.
The primary power dissipation occurs between the collector and emitter terminals.
The power contributed by the base-emitter circuit (P = Vbe * Ie) is generally negligible compared to the collector-emitter power, though it can be included for precise calculations.
The primary power dissipation occurs between the collector and emitter terminals.
The power contributed by the base-emitter circuit (P = Vbe * Ie) is generally negligible compared to the collector-emitter power, though it can be included for precise calculations.
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