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Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 1 (Q.No. 9)
Electronic Devices and Circuits
9.

Assertion (A): A p-n junction has high resistance in reverse direction.

Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:

The increase in reverse resistance is due to widening of depletion layer.

Discussion:
3 comments Page 1 of 1.
Avinash said:   9 years ago
I think the answer should be (B).

The reason is also correct but not a correct explanation.

Correct explanation: During reverse bias of diode, only leakage current flows that are very small enough to neglect. Hence giving high resistance.
Sum said:   9 years ago
How can it be possible? p-n junction is unidirectional. So, there is no any existence of Reverse direction of the current.
Akbar said:   10 years ago
In RB the diode is in open circuit condition due to increased depletion region width so it has high resistance.
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