Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 12 (Q.No. 27)
27.
A-P type material has an acceptor ion concentration of 1 x 1016 per cm3. Its intrinsic carrier concentration is 1.48 x 1010/ cm. The hole and electron mobilities are 0.05m2/V-sec and 0.13 m2/V-sec respectively calculate the resistivity of the material
Discussion:
1 comments Page 1 of 1.
Ossas said:
7 years ago
1/σ.
1/e(A+B).
A=acceptor concentration x hole mobility.
B=carrier concentration x electron mobility.
Note: units should be consistent (cm).
1/e(A+B).
A=acceptor concentration x hole mobility.
B=carrier concentration x electron mobility.
Note: units should be consistent (cm).
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