Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 1 (Q.No. 19)
19.
A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.
Answer: Option
Explanation:
By increasing of temperature by 10°C, Io become double so by increasing temperature 20°C, Io become 4 time than initial value... and it is 40 PA.
Discussion:
3 comments Page 1 of 1.
Hemanth said:
1 decade ago
Io doubles for every 10 degree rise in temperature..so,
20-30----Io=20 pA(10*2).
30-40----Io=40 pA(20*2).
20-30----Io=20 pA(10*2).
30-40----Io=40 pA(20*2).
(2)
Vishaldeep said:
1 decade ago
It can also be calculated as:
Io (40°C) = Io (20°C)(2^[(T2-T1)/10]);
Io = 10*(2^[(40-20)/10]);
Io = 10*(2^[2]).
Io = 10*4.
Io = 40 pA.
Io (40°C) = Io (20°C)(2^[(T2-T1)/10]);
Io = 10*(2^[(40-20)/10]);
Io = 10*(2^[2]).
Io = 10*4.
Io = 40 pA.
(2)
Rinku said:
1 decade ago
Initial temperature at 10*- 5pa current.
20*-10pa, 30*-20, so that at 40*-40pa.
20*-10pa, 30*-20, so that at 40*-40pa.
(1)
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