Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 10 (Q.No. 25)
25.
The impurity commonly used for realizing the base region of a n-p-n transistor is
gallium
indium
boron
phosphorus
Answer: Option
Explanation:
No answer description is available. Let's discuss.
Discussion:
1 comments Page 1 of 1.

Pkn said:   8 years ago
Answer is D.

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