Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 27
- Electronic Devices and Circuits - Section 26
- Electronic Devices and Circuits - Section 25
- Electronic Devices and Circuits - Section 24
- Electronic Devices and Circuits - Section 23
- Electronic Devices and Circuits - Section 22
- Electronic Devices and Circuits - Section 21
- Electronic Devices and Circuits - Section 20
- Electronic Devices and Circuits - Section 19
- Electronic Devices and Circuits - Section 18
- Electronic Devices and Circuits - Section 17
- Electronic Devices and Circuits - Section 16
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 2
36.
When cells having different emfs are connected in parallel, a circulating current flows.
Answer: Option
Explanation:
To avoid circulating current cells in parallel should be identical.
37.
In a specimen of cast iron, a field strength of 400 AT/m cause a flux density of 0.6 T. In a specimen of silicon steel, the same value of H would cause B to be
Answer: Option
Explanation:
Since μr for silicon steel is more than that of cast iron, flux density will be more than 0.6 T.
38.
The circuit shown in figure, will act as an ideal current source with respect to terminals A and B, when frequency is


Answer: Option
Explanation:
to find the frequency. Put XC + XL = 0.
39.
The realization of a term
in the impedance function will give

Answer: Option
Explanation:
Impedance of capacitance
40.
An RL admittance function can also be realized as
Answer: Option
Explanation:
RL admittance function and RC impedance function have similar forms.
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers