IndiaBIX

Electronic Devices - FET Devices

Exercise : FET Devices - Filling the Blanks
11.
A(n) ________ can be used to check the condition of an FET.
digital display meter (DDM)
ohmmeter (VOM)
curve tracer
All of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
12.
________ has high input impedance, fast switching speeds, and lower operating power levels.
CMOS
FET
BJT
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
13.
The primary difference between the construction of depletion-type and enhancement-type MOSFETs is ________.
the size of the transistor
the absence of the channel
the reverse bias junction
All of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
14.
The region to the right of the pinch-off locus is commonly referred to as the ________ region.
constant-current
saturation
linear amplification
All of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
15.
The primary difference between the construction of a MOSFET and an FET is the ________.
construction of the gate connection
low input impedance
threshold voltage
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers