Electronic Devices - FET Devices

Exercise : FET Devices - Filling the Blanks
6.
In an FET transistor, the depletion region is ________ near the top of both p-type materials.
wider
narrower
the same as the rest of the depletion region
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.

7.
The ________ transistor has become one of the most important devices used in the design and construction of integrated circuits for digital computers.
MOSFET
BJT
JFET
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.

8.
The silicon dioxide (SiO2) layer used in a MOSFET is ________.
an insulator
a conductor
a semiconductor
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.

9.
VMOS FETs have a ________ temperature coefficient that will combat the possibility of thermal runaway.
positive
negative
zero
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.

10.
The enhancement-type MOSFET is in the cutoff region if ________.
applied VGS is larger than VGS(Th)
applied VGS is less than or equal to VGS(Th)
VGS has a positive level
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.