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Electronic Devices - FET Devices

Exercise : FET Devices - Filling the Blanks
21.
As VGS becomes ________ negative, the slope of each curve in the characteristics becomes ________ horizontal corresponding with an increasing resistance level.
less, more
more, less
more, more
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
22.
In an n-channel enhancement-type MOSFET with a fixed value of VT, the ________ the level of VGS, the ________ the saturation level for VDS.
higher, more
higher, less
lower, lower
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
23.
The FET resistance in the ohmic region is ________ at VP and ________ at the origin.
smallest, largest
largest, smallest
larger, smaller
smaller, larger
Answer: Option
Explanation:
No answer description is available. Let's discuss.
24.
In the n-channel transistor, the drain and source are connected to the ________ channel while the gate is connected to the two layers of ________ material.
p-type, n-type
p-type, p-type
n-type, p-type
n-type, n-type
Answer: Option
Explanation:
No answer description is available. Let's discuss.
25.
The transfer curve can be obtained by ________.
using Shockley's equation
using both Shockley's equation and by output characteristics
characteristics
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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