Electronic Devices - FET Devices

Exercise : FET Devices - Filling the Blanks
16.
The FET is a ________ device depending solely on either electron (n-channel) or hole (p-channel) conduction.
unipolar
bipolar
tripolar
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.

17.
In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of ID referred to as the ________ region.
depletion, enhancement
enhancement, enhancement
enhancement, depletion
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.

18.
The active region of an FET is bounded by ________.
ohmic region
cutoff region
power line
All of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.

19.
The level of ________ that results in the significant increase in drain current in enhancement-type MOSFETs is called threshold voltage VT.
VDD
VDS
VGS
VDG
Answer: Option
Explanation:
No answer description is available. Let's discuss.

20.
A junction field-effect transistor (JFET) is a ________ device.
current-controlled
voltage-controlled
voltage-current controlled
None of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.