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Online Electronics and Communication Engineering Test - Electronic Devices and Circuits Test

Instruction:
  • This is a FREE online test. Beware of scammers who ask for money to attend this test.
  • Total number of questions: 20.
  • Time allotted: 30 minutes.
  • Each question carries 1 mark; there are no negative marks.
  • DO NOT refresh the page.
  • All the best!

Marks : 2/20

Total number of questions
20
Number of answered questions
0
Number of unanswered questions
20
Test Review : View answers and explanation for this test.
1.
In which of the following is the width of junction barrier very small?
Tunnel diode
Photo diode
PIN diode
Schottky diode
Your Answer: Option
(Not Answered)
Correct Answer: Option
Explanation:

Schottky diode has very small depletion layer.

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2.
An electron rises through a voltage of 100 V. The energy acquired by it will be
100 eV
100 joules
(100)1.2 eV
(100)1.2 joules
Your Answer: Option
(Not Answered)
Correct Answer: Option
Explanation:

When an electron rises through 1 V, energy = 1 eV.

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3.
An extrinsic semiconductor sample has 6 billion silicon atoms and 3 million pentavalent impurity atoms. The number of electrons and holes is
3 million each
6 billion each
3 million free electrons and very small number of holes
3 million holes and very small number of free electrons
Your Answer: Option
(Not Answered)
Correct Answer: Option
Explanation:

When pentavalent impurity is added, the number of fresh electrons is very large as compared to number of holes.

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4.

Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be exceeded.

Reason (R): A high inverse voltage can destroy a p-n junction.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Your Answer: Option
(Not Answered)
Correct Answer: Option
Explanation:

PIV is an important parameter in rectifier operation.

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5.
At room temperature kT = 0.03 eV.
True
False
Your Answer: Option
(Not Answered)
Correct Answer: Option
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6.
Consider the following statement: At finite temperature, magnetic dipoles in a material are randomly oriented giving low magnetization. When magnetic field H is applied, the magnetization?
  1. Increases with H
  2. Decreases with H
  3. Decreases with temp for constant H
Which of the statement given above is/are correct?
1
2
2, 3
1 and 3
Your Answer: Option
(Not Answered)
Correct Answer: Option
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7.
The amount of time between the creation and disappearance of a hole in an intrinsic semiconductor material is called
life cycle
recombination time
life time
half life
Your Answer: Option
(Not Answered)
Correct Answer: Option
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8.
Which one of the following gain equations is correct for a MOSFET common-source amplifier?
(gm is mutual conductance, and RD is load resistance at the drain)
AV = gm/(1 - RD)
AV = gm/RD
AV = gm/(1 + RD)
AV = RD/gm
Your Answer: Option
(Not Answered)
Correct Answer: Option
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9.
An intrinsic semiconductor (intrinsic electron density = 1016 m-3) is deped with donors to a level of 1022 m-3. What is the hole density assuming all donors to be ionized?
107 m-3
108 m-3
1010 m-3
106 m-3
Your Answer: Option
(Not Answered)
Correct Answer: Option
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10.
Lowest noise can be expected in case of
carbon composition resistors
carbon film resistors
tin oxide resistors
metal film resistors
Your Answer: Option
(Not Answered)
Correct Answer: Option
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11.
EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that
more number of electron-hole pairs will be generated in silicon than in germanium at room temperature
less number of electron hole pairs will be generated in silicon than in germanium at room temperature
equal number of electron-hole pairs will be generated in both at lower temperatures
equal number of electron-hole pairs will be generated in both at higher temperatures
Your Answer: Option
(Not Answered)
Correct Answer: Option
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12.
Photoelectric emitters in photo tubes are generally made of
alkali metals
metals
semiconductors
metal and semiconductors
Your Answer: Option
(Not Answered)
Correct Answer: Option
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13.
Fill in the suitable word in the blanks is the following questions. The electron in the outermost orbit is called __________ electron.
valence
covalent
acceptor
donor
Your Answer: Option
(Not Answered)
Correct Answer: Option
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14.
Before doping the semiconductor material is
dehydrated
heated
hardened
purified
Your Answer: Option
(Not Answered)
Correct Answer: Option
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15.
Due to the formation of Schottky defects the density of the crystal
increases slightly
increases appreciably
decreases slightly
decreases appreciably
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(Not Answered)
Correct Answer: Option
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16.
Hall coefficient KH and charge density r are related as
KH =
KH = r
KH =
KH = (r)1.2
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(Not Answered)
Correct Answer: Option
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17.
The equivalent circuit of an ideal diode is
a charging condenser
a discharging condenser
a switch
a resistor
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(Not Answered)
Correct Answer: Option
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18.
The number of protons in a silicon atom is
32
28
14
4
Your Answer: Option
(Not Answered)
Correct Answer: Option
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19.
Piezoelectric quartz crystal resonators find application where
signal amplification is required
rectification of the signal is required
signal frequency control is required
modulation of signal is required
Your Answer: Option
(Not Answered)
Correct Answer: Option
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20.
Each cell of a static Random Access memory contains
6 MOS transistor
4 MOS transistor, 2 capacitor
2 MOS transistor, 4 capacitor
1 MOS transistor and 1 capacitor
Your Answer: Option
(Not Answered)
Correct Answer: Option
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