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Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 9 (Q.No. 10)
Electronic Devices and Circuits
10.
EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that
more number of electron-hole pairs will be generated in silicon than in germanium at room temperature
less number of electron hole pairs will be generated in silicon than in germanium at room temperature
equal number of electron-hole pairs will be generated in both at lower temperatures
equal number of electron-hole pairs will be generated in both at higher temperatures
Answer: Option
Explanation:
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