Electronics - Semiconductor Principles - Discussion
Discussion Forum : Semiconductor Principles - General Questions (Q.No. 24)
24.
What is the voltage across R1 if the P-N junction is made of silicon?
Discussion:
23 comments Page 1 of 3.
Santosh said:
1 decade ago
Vout=Vin-Vsi,
Vout=12-0.7
=11.3
Vout=12-0.7
=11.3
Girish said:
1 decade ago
Sorry dear I can not understand what is Vsi, anyone can explain.
Meena said:
1 decade ago
@Girish Vsi is voltage of silicon which is 0.7v it is constant
Saichaitanya said:
1 decade ago
@Meena/ Santosh - Why the difference have been considered here (i.e. 13-0.7), since the voltage have to be added in series?
Akanksha said:
1 decade ago
As the forward bias Si P-N Junction produces a barrier voltage of 0.7 V. Barrier voltage will oppose forward biasing voltage 12V .
That's why 12-0.7 = 11.3V is the answer.
That's why 12-0.7 = 11.3V is the answer.
Pradheep h n said:
1 decade ago
Since diode is silicon so forward drop at diode is 0.7V remind voltage of Vin = 12-0.7 = 11.3
Vishnu said:
1 decade ago
0.7 voltage drops across PN junction
Gopal verma said:
1 decade ago
But resistance in kilo ohms and voltage in volts so both are different in systems. Answer should be 11.3 * 10 to the power -3.
Amites said:
1 decade ago
0.7v is Barrier Voltage which must be applied for diffusion to happen.
Shahin Ali said:
1 decade ago
0.7v is the cut off voltage of Silicon.
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