Electronics and Communication Engineering - Microwave Communication
Hollow metallic enclosures exhibit resonance behaviour when excited by electromagnetic field.
These enclosures are called cavity resonators.
Range of radar is proportional to antenna diameter.
Assertion (A): Gunn diode is a transferred electron device.
Reason (R): A Gunn oscillator uses the phenomenon of transferred electron effect.
A Gunn diode uses GaAs which has a negative differential mobility, i.e., a decrease in carrier velocity with increase in electric field.
This effects is called transferred electron effect. The impedance of a Gunn diode is tens of ohms.
A Gunn diode oscillator has a resonant cavity, an arrangement to couple Gunn diode to cavity, biasing arrangement for Gunn diode and arrangement to couple RF power to load.
Applications of Gunn diode oscillator include continuous wave radar, pulsed radar and microwave receivers.
Atomic and molecular distances are very small. Therefore resonance can occur only at microwave frequencies.

Z01 provides series inductances and teflon filled low impedance line Z02 provides shunt capacitance.