Electronics and Communication Engineering - Materials and Components - Discussion
Discussion Forum : Materials and Components - Section 5 (Q.No. 41)
41.
Assertion (A): In an intrinsic semiconductor J = (μn x μp)eni.
Reason (R): Intrinsic charge concentration ni at temperature T is given by ni2 = A0 T3 e-EG0/kT.
Discussion:
1 comments Page 1 of 1.
Sreekanth said:
9 years ago
It's wrong option.
Because assertion is wrong.
Here hole and electron mobilities are added not multiples.
Because assertion is wrong.
Here hole and electron mobilities are added not multiples.
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