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Electronics and Communication Engineering - Materials and Components

Exercise : Materials and Components - Section 5
1.

Assertion (A): Intrinsic resistivity of silicon is lower than that of germanium.

Reason (R): Magnitude of free electron concentration in germanium is more than that of silicon.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:
No answer description is available. Let's discuss.
2.
The units for ∈r are
Farads
Farads/m
no units
Answer: Option
Explanation:

∈r is only a numeric. Hence no units.

3.
The real part of complex dielectric constant and tanδ for a dielectric are 2.1 and 5 x 10-4 at 100 Hz respectively. The imaginary part of dielectric constant at 100 Hz is
1.05 x 10-3
2.1 x 10-3
5 x 10-3
1.05 x 10-2
Answer: Option
Explanation:

4.
A copper atom is neutral. Its core has a net charge of
0
+ 1
- 1
+ 2
Answer: Option
Explanation:
No answer description is available. Let's discuss.
5.
As the temperature of semiconductor is increased
the average number of free charge carriers decreases
the average number of free charge carriers increases
the average number of free charge carriers remains the same
the average number of free charge carriers may increase or decrease
Answer: Option
Explanation:

As temperature increases, conductivity of semi- conductors increases.

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