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Electronics and Communication Engineering - Exam Questions Papers - Discussion

Discussion Forum : Exam Questions Papers - Exam Paper 21 (Q.No. 26)
Exam Questions Papers
26.
A silicon wafer has 100 nm of oxide it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate
is independent of current oxide thickness and temperature
is independent of current oxide thickness but depends on temperature
slows down as the oxide grows
is zero as the existing oxide prevents further oxidation
Answer: Option
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