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Electronics and Communication Engineering - Exam Questions Papers - Discussion

Discussion Forum : Exam Questions Papers - Exam Paper 12 (Q.No. 15)
Exam Questions Papers
15.
A n-type silicon sample contains a donor concentration of Nd = 2 x 1016 cm-3. The minority carrier hole lifetime is tp0 = 5 μs. The thermal equilibrium generation rate of hole is:
1.125 x 109 cm-3 s-1
0.625 x 109 cm-3 s-1
4.5 x 109 cm-3 s-1
2.25 x 109 cm-3 s-1
Answer: Option
Explanation:

Then thermal generation rate

= 2.25 x 109 cm3 S-1 .

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