Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 12 (Q.No. 24)
24.
An n channel depletion type MOSFET has
lightly doped p substrate and highly doped n source and drain
highly doped p substrate and highly doped n source and drain
highly doped p substrate and lightly doped n source and drain
lightly doped n substrate and highly doped n source and drain
Answer: Option
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