Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 9 (Q.No. 9)
9.
In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in silicon is about
15 x 104 per cm3
5 x 1012 per cm3
1.45 x 1010 per cm3
1.45 x 106 per cm3
Answer: Option
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