Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

Discussion Forum : Electronic Devices and Circuits - Section 1 (Q.No. 14)
14.
In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor atoms is increased. The new position of Fermi level is likely to be
0.5 eV above valence band
0.28 eV above valence band
0.1 eV above valence band
below the valence band
Answer: Option
Explanation:

Addition of acceptor atom brings Fermi level closer to valence band.

Discussion:
15 comments Page 2 of 2.

Shobhit N Lal said:   8 years ago
If less amount of p-type material is added then Fermi level will slightly move towards valence band(.3eV to .28eV).
If more amount of p-type material is added then Fermi level will move even closer to valence band (.3eV to .1eV).
If further doping is increased then Fermi level enters valence band (below valence band)

So how can we say that .28eV is correct?

Bala Yesu said:   6 years ago
Fermi level of n-type semiconductor is above the valence band if you increase acceptor ions fermi level with is increased that's why Fermil level was close to the valence band.

Unknown said:   1 month ago
I am not understanding this. Please explain to me.

Tarif said:   2 weeks ago
@All.

Consider the Fermi Level the roof of the room, and the floor of the room is VB. The more you add acceptor atoms, the closer the roof (FL) will be closer to the floor (VB).

The distance will start decreasing, so first it will be 0.29, then 0.28, then 0.27, then gradually 0.1 after a certain amount of addition. Anyway, the new position of the roof (Fermi Level) is 'likely to be' 0.28. This comes first among the given options. If 0.29 were given, I would go for 0.29.

Soumajit Ghosh Dastider said:   6 days ago
The shift in the Fermi level is logarithmic, not linear (Ef-Ev=KTln(Nv/Na)).

To move the Fermi Level from 0.3eV to 0.1eV, a massive increase in acceptor atoms is required —degenerate doping.

The more practical approach will only shift it towards 0.28eV.


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